X-ray reflectivity investigation of multilayer macroporous silicon structures

Abstract

Abstract In this work, the X-ray reflectivity was used to study the porosity of multilayer macroporous silicon samples obtained under various conditions. The porosity calculation is based on a change in the position of the critical angle of total external reflection resulting from a decrease in the density of the porous silicon layer. Our findings show that the absence of photoluminescence in the samples is due to a porosity of about 30 % in the surface layer. The morphological features were characterized by scanning electron and atomic force microscopy.