Features of the Composition and Photoluminescent Properties of Porous Silicon Depending on Its Porosity Index

Author:

Lenshin Aleksandr S.12,Peshkov Yaroslav A.1,Barkov Konstantin A.1,Grechkina Margarita V.1,Lukin Anatoliy N.1,Kannykin Sergey V.1,Minakov Dmitriy A.1,Chernousova Olga V.2ORCID

Affiliation:

1. Physical Department, Voronezh State University, 394000 Voronezh, Russia

2. Chemical Department, Voronezh State University of Engineering Technologies, 394000 Voronezh, Russia

Abstract

Porous silicon samples with a porosity index of 5% to 80% were obtained in this work by electrochemical etching, and their photoluminescence properties were also studied. The porosity index was calculated according to the data from X-ray reflectometry. The composition of the surface was controlled by ultra-soft X-ray spectroscopy and infrared (IR) spectroscopy. The degree of the sample surface oxidation increased with the porosity enhancement. Two known mechanisms of photoluminescence in porous silicon were detected that are related to the composition and morphology of its surface. The values of the porosity index specifying the dominations of these mechanisms were determined. Enhancement of photoluminescence was shown to be attributed to an increase in the porosity index.

Funder

Russian Science Foundation

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

Reference16 articles.

1. Canham, L. (2018). Handbook of Porous Silicon, Springer.

2. Origins of photoluminescence degradation in porous silicon under irradiation and the way of its elimination;Lenshin;Mater. Sci. Semicond. Process.,2017

3. Porous silicon: A quantum sponge structure for silicon based optoelectronics;Bisi;Surf. Sci. Rep.,2000

4. Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p +-layer;Lenshin;Tech. Phys.,2012

5. Two-peak photoluminescence and light-emitting mechanism of porous silicon;Zhang;Phys. Rev. B,1995

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