Plasma-chemical deposition of gallium oxide layers by oxidation of gallium in the hydrogen-oxygen mixture

Abstract

Abstract Gallium oxide is an ultra wide band gap (the width of the band gap is 4.85 eV) transparent semiconducting oxide, that nowadays attracts much attention of scientists and manufacturers. However, the main obstacle, preventing from its massive commercial implementation, is the lack of technological methods to its production; it is supposed to be cheap, reproducible, and scalable. In this work we are developing a novel plasma-chemical method of Ga2O3 thin films’ synthesis; according to this method only high-purity elemental gallium was used as the source of gallium delivered by the hydrogen flow into the plasma discharge zone, where the interaction with oxygen took place. The properties of the solid phase obtained in the conditions of heteroepitaxial growth were studied depending on the experimental parameters.