Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/794/i=1/a=012013/pdf
Reference16 articles.
1. Dilute III-V Nitride Semiconductors and Material Systems
2. Observation of a 0.7eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy
3. Structural and electrical characteristics of InGaAsN layers grown by LPE
4. Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers
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1. Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications;Materials Research Express;2019-08-28
2. Surface photovoltage study of GalnNAs layers for photovoltaic applications;Journal of Physics: Conference Series;2019-03
3. Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy;Journal of Crystal Growth;2018-02
4. Multiscale in modelling and validation for solar photovoltaics;EPJ Photovoltaics;2018
5. Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys;Semiconductor Science and Technology;2017-07-04
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