A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/574/i=1/a=012144/pdf
Reference12 articles.
1. MEMS Materials and Processes Handbook
2. Low stress PECVD—SiNxlayers at high deposition rates using high power and high frequency for MEMS applications
3. Grid-Based Simulation of Industrial Thin-Film Production
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-01
2. Reduced order modelling for efficient numerical optimisation of a hot-wall chemical vapour deposition reactor;International Journal of Numerical Methods for Heat & Fluid Flow;2017-07-03
3. Studying the Influence of n-Type Strained (111) Silicon on the Piezoresistive Coefficients;IEEE Sensors Journal;2017-01-15
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