Effects of Post-Deposition Annealing Time in Forming Gas Ambient on Y2O3 Films Deposited on Silicon Substrate

Abstract

Abstract Effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800°C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples. In addition, capacitance-voltage characteristics of the investigated Al/Y2O3/Si-based metal-oxide-semiconductor capacitors were also presented in this work.