Author:
Guo Xuanchen,Yue Suge,Li Jiancheng,Zhou Tao,Zha Qichao
Abstract
Abstract
In this paper, the data retention capability of 55nm SONOS Flash under the worst condition is studied by superimposing experiments of program/erase cycles, total ionizing dose (TID) and data bake. The results show that after 100k program/erase cycles and data bake, the data retention of the memory transistor is basically not affected. After 100k program/erase cycles, 200Krad(Si) TID and data bake, the data retention of the SONOS memory transistor is mainly reflected in the radiation-induced charge leakage. If the data is rewritten after TID, irradiation has basically no impact on its data retention capability.
Subject
General Physics and Astronomy
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