Study of the effect of substrate holder temperature on the etching rate of monocrystalline silicon carbide

Abstract

Abstract The paper touches upon the features of thermal stimulated plasma chemical etching (PCE) 6H-SiC in fluorine-containing inductively coupled plasma (ICP) in the temperature range from 50 °C to 300 °C. It was found that the etching rate of silicon carbide increases linearly from 0.9 µm/min to 1.3 µm / min with an increase in the temperature of the substrate holder from 50 °C to 150 °C, and further temperature increase to 300 °C does not contribute to an increase in the etching rate of SiC. On the basis of the obtained experimental data, the physicochemical regularities of plasma chemical etching of silicon carbide at elevated values of the substrate temperature were determined.