Temperature-dependent photoluminescence of InAs quantum dots Grown on Silicon

Abstract

Abstract This paper presents detailed studies on the temperature dependent photoluminescence (PL) of self-assembled InAs/GaAs quantum dots grown on planar on-axis Si (001) substrates. Through the analyze, we have a better understanding of carrier transport processes into InAs/GaAs quantum dots system. Before 160K, the carrier transport from wetting layer to excited states (ES) and ground states (GS) is domination. As the temperature keeps rising, carrier thermal escape from GS to ES is domination.