Recent Advances in Copper Polycrystal Film’s Grain Boundaries Behavior and Its Influence in Properties with Molecular Dynamic Simulation

Abstract

Abstract Abstract.Copper polycrystal film(CPF) is accepted as a promising material for electroplated film in semiconductor devices for its outstanding conductivity and ductility as well as the good resistance to elector-migration. However, the film material attains a rapid failure in the working environment, and hence the failure mechanism and the fabrication methods require more exploration. In previous studies, it is convinced that grain boundaries(GBs) movement and its interaction with twining boundaries(TBs) and dislocations have a great influence on the failure process. In this study, the applications of Molecular Dynamic(MD) Simulation in the research of CPF have been introduced. The GBs behaviour including deformation of the GBs and the interaction between GBs and TBs that is observed by dislocation extraction algorithm(DXA) has been summarized, and its relation to the properties such as yield strength and the roughness of growth has been discussed. And the best condition to construct a CPF with magnetron sputtering method is concluded to have substrates in 700K as well as low misorientation with grains under incident atoms of large enough kinetic energy and vertical incident angle.