Contemporary heterostructures for solar cells improvement

Abstract

Abstract Current investigation is focused on InxGa1-xP and InxAl1-xP epitaxial layers growth. Multicomponent nanoheterostructures are the main materials for a contemporary triple-cascade solar cell, and for perspective photovoltaic devices. The optimal InxGa1-xP and InxAl1-xP growth process characteristics are determined. InxGa1-xP epitaxial layers (with In & Ga varied on Ge), and InxAl1-xP layers (with Al & In varied on Ge and GaAs) are investigated. During investigation X-ray diffractometry was used. Based on results of X-ray diffractometry the lattice parameter and In / Ga / Al ratio in the structure were detected. Solid phase versus the gas phase composition correlation was found based on the lattice parameters. It is determined that diffraction X-ray peaks broadening can be used as a parameter for the heterostructure perfection analyze. For the InxGa1-xP solid solution (X = 45–53 %) and for InxAl1-xP solid solution (X = 46-51 %) a high quality of the single-crystal structure and a slight diffraction X-ray peaks broadening are detected.