EBIC investigation of InGaN/GaN multiple quantum well structures irradiated with low energy electrons
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/281/i=1/a=012013/pdf
Reference13 articles.
1. Microstructural origins of localization in InGaN quantum wells
2. EBIC characterization of light-emitting structures based on GaN
3. Comparative study of quantum efficiency of blue LED with different nanostructural arrangement
4. Defects with bright contrast in the induced-current mode in GaN-based light-emitting structures
5. EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW
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1. Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers;Journal of Physics D: Applied Physics;2020-10-06
2. Temperature Dependence of Low-Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures;physica status solidi (b);2018-03-06
3. Inverse bias effect on the optical properties of light-emitting diodes with multiple InGaN/GaN quantum wells when irradiated by an electron beam in a scanning electron microscope;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2015-09
4. Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well;Semiconductors;2015-02
5. Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping;Nanoscale;2015
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