Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/326/i=1/a=012039/pdf
Reference9 articles.
1. MBE Growth of (In)GaN for LED Applications
2. Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm
3. Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
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