Graphenic carbon as etching mask: patterning with laser lithography and KOH etching

Author:

Furio A,Stelzer M,Jung M,Neitzert H C,Kreupl F

Abstract

Abstract The wet anisotropic etching process is generally used in the field of micromachining (MEMS), particularly for commercial products such as accelerometers. Hard masks like oxide or nitride play a key role in the transfer of patterns to the substrate during the lithography process. This work reports on the use of polycrystalline graphenic carbon as an etch mask for wet chemical processing and outlines a simple method to create patterned structures on (100) silicon wafers. Graphenic carbon (GC) was deposited on the silicon substrate by chemical vapor deposition (CVD) using C2H4 as precursor. The desired pattern was written in the spin-coated negative photoresist using UV laser lithography. Different geometrical shapes were printed on the substrate with dimensions ranging from 10 to 50 micrometers. In the next stage, the O2 plasma etched away the carbon from the area not covered by the photoresist, acting as an additional mask for this and the subsequent processing steps. Finally, the sample was immersed in the KOH bath saturated with isopropanol and the etching rate was evaluated for each crystal plane. Compared to the use of a sacrificial oxide mask, this technique is simpler and produces more reliable results.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3