Influence of GaAs substrate misorientation on gallium and arsenic evaporation rates

Abstract

Abstract The dependence of the Ga and As evaporation rates on GaAs(111)A substrate misorientation was analyzed using Monte Carlo simulation. The gallium and arsenic desorption rates are proportional to the step density of vicinal substrates at congruent (layer-by-layer) evaporation. With incongruent evaporation (gallium droplet formation on the surface), the arsenic desorption rate weakly depends on the substrate misorientation and the gallium desorption rate is independent of it.