Study of characteristics of LEDs based on InGaN/GaN quantum wells under short electric impacts accompanied by joule heating

Abstract

Abstract Results are presented of a study of commercial blue and UV light-emitting diodes based on structures with InGaN/GaN quantum wells. An accelerated aging was provided by currents of 80 – 190 mA under a forward bias with duration not exceeding 3 h. The study demonstrated the possible rise in the external quantum efficiency by 20% relative to that in the starting samples. The possible physical mechanisms responsible for the rise in the quantum efficiency and for the formation of a low-frequency current noise are presented.