Predictor of reliability indicators for nanoelectronic heterostructure devices with transverse current transfer under conditions of limited experimental information based on Bayesian inversion

Abstract

Abstract Predictor of the reliability indicators of resonant tunneling diodes with a generalization of the methodology for nanoelectronic heterostructure devices with quantum confinement and transverse current transfer has been developed. The advantage of the developed software is the possibility of interactive input of additional experimental information for further calculation of point and interval estimates of the reliability indicators of semiconductor devices using Bayesian inversion, which allows predicting these indicators under conditions of limited experimental information.