Effect of Si/C flux ratio on the growth of 3C-SiC on Si(111) by SSMBE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
4. Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0001) by vertical hot-wall chemical vapor deposition
5. Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface;Physics of the Solid State;2019-07
2. Effect of different Ge predeposition amounts on SiC grown on Si (111);Applied Surface Science;2009-03
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