Correlation between local atomic structure and ultraviolet luminescence of AlGdN thin films-Reference-Cited by-同舟云学术

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Correlation between local atomic structure and ultraviolet luminescence of AlGdN thin films

Published:2013-03-01 Issue: Volume:417 Page:012049
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Ichii Kuniyuki,Kitayama Shinya,Iwahashi Shinya,Nakamura Junya,Reddithota Vidya Sagar,Kita Takashi,Chigi Yoshitaka,Nishimoto Tetsurou,Tanaka Hiroyuki,Kobayashi Mikihiro,Ishihara Tsuguo,Izumi Hirokazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/417/i=1/a=012049/pdf

Reference17 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

2. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

3. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

4. Ultraviolet photoluminescence from Gd-implanted AlN epilayers

5. Intense ultraviolet cathodoluminescence at 318 nm from Gd3+-doped AlN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN;Journal of Applied Physics;2015-04-28

2. Resonant indirect excitation of Gd3+ in AlN thin films;Journal of Applied Physics;2014-05-07

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