Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/193/i=1/a=012037/pdf
Reference18 articles.
1. Strained Si, Ge, andSi1−xGexalloys modeled with a first-principles-optimized full-zonek∙pmethod
2. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
3. Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion
4. Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates
5. Polar Mobility of Holes in III-V Compounds
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27
2. SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time;Solid-State Electronics;2011-07
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