Experimental study of transport in InAs Quantum Hot Electron Transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/193/i=1/a=012014/pdf
Reference9 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
3. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
4. Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
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1. Study of resonant transport in InAs-based quantum hot electron transistors;AIP Advances;2020-07-01
2. Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers;IEEE Electron Device Letters;2015-01
3. Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors;Applied Physics Express;2013-12-30
4. Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices;Semiconductors;2013-11
5. Negative Differential Conductivity in InAs/AlSb Superlattices;Acta Physica Polonica A;2011-02
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