Surface photovoltage in a p-GaN(Cs) photocathode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/1199/i=1/a=012031/pdf
Reference23 articles.
1. Negative electron affinity of cesiated p-GaN(0001) surfaces
2. Development of GaN photocathodes for UV detectors
3. Development of UV image intensifier tube with GaN photocathode
4. Thermal emittance and response time measurements of a GaN photocathode
5. Photoemission lifetime of a negative electron affinity gallium nitride photocathode
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1. Electrostatically Generated Air-Stable Negative Electron Affinity Silicon Photocathode;ACS Photonics;2023-12-05
2. Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode;Journal of Vacuum Science & Technology B;2022-12
3. The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2;Applied Surface Science;2022-10
4. Influence of Surface Cleaning on Quantum Efficiency, Lifetime and Surface Morphology of p-GaN:Cs Photocathodes;Micromachines;2022-05-29
5. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode;Microelectronic Engineering;2020-02
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