SO phonon scattering rates at the Si-HfO2interface in Si MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/38/i=1/a=044/pdf
Reference6 articles.
1. Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
2. Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
3. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
4. Impact of high-/spl kappa/ dielectric HfO/sub 2/ on the mobility and device performance of sub-100-nm nMOSFETs
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1. Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule;MRS Proceedings;2013
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