Electrical and Microstructural Characterization of TiO2 Thin Films for Flexoelectric Devices

Abstract

Abstract This work investigates the flexoelectric potential of titanium oxide thin films regarding their microstructural and electrical properties to be integrated into nanoscaled resonators. Flexoelectricity is an electromechanical effect that can result in deformation of a material due to a polarization gradient and can outperform piezoelectric effects at the nanoscale. The flexoelectric constant is linearly dependent on the permittivity and therefore we determined TiO2 as a suitable flexoelectric material because of its high permittivity, its CMOS compatability and its linearity with respect to polarization. TiO2 capacitors with various electrode materials are evaluated in order to achieve the c-axis oriented (110) rutile growth, thus to exploit the highest permittivity. The permittivity ranges from 65 to 95, with TiO2 on IrO2 electrodes representing the highest value achieved in this study. As expected, the IrO2/TiO2/IrO2 capacitors show an almost constant impedance up to 200 kHz and have leakage current density values of ∼10−3 A/cm2 at 0.5 MV/cm at room temperature.