Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

Abstract

Abstract A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.