Influence of neutron irradiation on optoelectronic properties of structures with the InAs/GaAs quantum dots

Abstract

Abstract The effect of neutron irradiation on the photosensitivity of the InAs/GaAs quantum dots has been investigated. It was shown that after neutron irradiation with a fluence of 1.5×1015 cm-2 the photosensitivity at the room temperature has been decreased at 3 times, whereas the shape of the photosensitivity’s temperature dependence didn’t reveal any visible changes, despite an appearance of defects in quantum dot layer. The effect was explained by the difficulty of a motion of photoexcited carriers in quantum dot layer to the recombination centres arised after irradiation.