Effect of oxygen on the properties of Ga2O3:Si thin films-Reference-Cited by-同舟云学术

Effect of oxygen on the properties of Ga2O3:Si thin films

Published:2019-12-01 Issue:1 Volume:1410 Page:012201
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Almaev A V,Chernikov E V,Kushnarev B O,Yakovlev N N

Abstract

Abstract The results of studies of electrical and gas-sensitive characteristics of thin films Ga2O3:Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga2O3:Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was proposed.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1410/1/012201/pdf

Reference11 articles.

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