Structure and Electrical Properties of β-Ga2O3 Films Obtained by Radio Frequency Magnetron Sputtering on Porous Silicon

Abstract

A wide range of possible applications of gallium oxide requires further investigations on growth techniques of its thin films, especially deposited on non-native substrates. One of the ways to avoid imperfection of Ga2O3 film because of variations in structure and lattice parameters of substrate could be an exploitation of buffer porous layer previously synthesized on the substrate. The 170 nm films deposited on porous-Si/Si substrate by rf magnetron sputtering are found out to be composed of β-Ga2O3 elliptical grains with sizes ∼150 nm. Both EDAX and Raman spectroscopy results show formation of a thin interfacial SiO2. Impedance spectroscopy measurements reveals two charge transfer processes with activation energies of 1.33 eV and 1.79 eV.