GaN growth via HVPE on SiC/Si substrates: growth mechanisms
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/917/i=3/a=032028/pdf
Reference12 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Advances in wide bandgap materials for semiconductor spintronics
3. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
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1. SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors;Mechanics and Control of Solids and Structures;2022
2. Spiral growth of a multicomponent crystal from vapor of its components;Journal of Crystal Growth;2020-10
3. A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates;Physics of the Solid State;2019-12
4. Spiral growth of a crystal due to chemical reaction;Journal of Physics: Conference Series;2018-12
5. The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates;ECS Journal of Solid State Science and Technology;2018
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