Advances in wide bandgap materials for semiconductor spintronics-Reference-Cited by-同舟云学术

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Advances in wide bandgap materials for semiconductor spintronics

Published:2003-02 Issue:4 Volume:40 Page:137-168
ISSN:0927-796X
Container-title:Materials Science and Engineering: R: Reports
language:en
Short-container-title:Materials Science and Engineering: R: Reports

Author:

Pearton S.J.,Abernathy C.R.,Norton D.P.,Hebard A.F.,Park Y.D.,Boatner L.A.,Budai J.D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference155 articles.

1. http://www.almaden.ibm.com/sst/.

2. Electric-field control of ferromagnetism

3. Effect of Optical Spin Injection on Ferromagnetically Coupled Mn Spins in the III-V Magnetic Alloy Semiconductor(Ga,Mn)As

4. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

5. Ferromagnetic III–V heterostructures

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