Effect of wafer defects on electrical properties and yields of SiC Devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of wafer defects on electrical properties and yields of SiC Devices

Published:2021-09-01 Issue:1 Volume:2033 Page:012095
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Li Ling,Yan Hailiang,Li Jialin,Li Qingling,Zhu Tao,Wu Hao,Liu Rui,Jin Rui,Wu Junmin

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/2033/1/012095/pdf

Reference7 articles.

1. Performance limiting surface defects in SiC epitaxial p-n junction diodes;Kimoto;IEEE Trans. Electron Devices,1999

2. Physics of Semiconductor Devices;Sze,1999

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the reliability of deep learning computational ghost imaging with prediction uncertainty based on neighborhood feature maps;Applied Optics;2024-05-01

2. Noise-robust deep learning ghost imaging using a non-overlapping pattern for defect position mapping;Applied Optics;2022-11-28

3. Relationship between the kernel size of a convolutional layer and the optical point spread function in ghost imaging using deep learning for identifying defect locations;Applied Optics;2022-08-02

4. Defect Inspection Techniques in SiC;Nanoscale Research Letters;2022-03-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP