Author:
Smirnova M A,Ivanov A S,Bachurin V I,Churilov A B
Abstract
Abstract
The process of microrelief formation on Si (100) surface under 30 keV Ga+ ion beam bombardment with doses 2⋅1017 - 4⋅1018 ion/cm2 at incident angles θ = 0 - 50° was studied. It was found that wave-like structures form on the surface at θ = 25° - 35° and doses 6⋅1017 - 2⋅1018 ion/cm2. The nice ripple formed at θ = 30±2° incident angles and irradiation dose 1018 ion/cm2.
Subject
General Physics and Astronomy
Cited by
1 articles.
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