Features of the MBE growth of nanowires with quantum dots on the silicon surface

Abstract

Abstract The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.