The electrical activity of GaN doped with transition metal impurities
Author:
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Reference21 articles.
1. Very low resistance multilayer Ohmic contact to n‐GaN
2. Metal semiconductor field effect transistor based on single crystal GaN
3. Chemically assisted ion beam etching of gallium nitride
4. Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaN
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4. Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications;Optik;2021-04
5. TiGa–VN complexes in GaN: a new prospect of carrier mediated ferromagnetism;RSC Advances;2015
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