Molecular-dynamics simulation of low-temperature growth of silicon films by cluster deposition
Author:
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Reference18 articles.
1. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
2. X-ray characteristics of atomically flat gold films deposited by ICB
3. ICB deposition and epitaxial growth of GaAs thin films
4. Ionized Cluster Beams: Physics and Technology
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