Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma-Reference-Cited by-同舟云学术

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Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

Published:1996-05-01 Issue:2 Volume:5 Page:268-274
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Sanden M C M van de,Severens R J,Gielen J W A M,Paffen R M J,Schram D C

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference40 articles.

1. Defect formation during growth of hydrogenated amorphous silicon

2. Role of hydrogen ions in plasma‐enhanced chemical vapor deposition of hydrocarbon films, investigated by in situ ellipsometry

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2. High throughput deposition of hydrogenated amorphous carbon coatings on rubber with expanding thermal plasma;Surface and Coatings Technology;2014-04

3. Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy;Japanese Journal of Applied Physics;2013-07-01

4. High rate deposition of amorphous hydrogenated carbon films by hollow cathode arc PECVD;Surface and Coatings Technology;2012-11

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