Experimental and theoretical study of RF capacitively coupled plasma in Ar–CF4–CF3I mixtures-Reference-Cited by-同舟云学术

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Experimental and theoretical study of RF capacitively coupled plasma in Ar–CF4–CF3I mixtures

Published:2015-08-18 Issue:5 Volume:24 Page:055006
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Proshina O V,Rakhimova T V,Lopaev D V,Šamara V,Baklanov M R,de Marneffe J-F

Funder

Semiconductor Research Corporation

Russian Foundation for Basic Research

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Link

http://stacks.iop.org/0963-0252/24/i=5/a=055006/pdf

Reference81 articles.

1. Plasma etching: Yesterday, today, and tomorrow

2. The 2012 Plasma Roadmap

3. Low dielectric constant materials for microelectronics

4. Plasma processing of low-k dielectrics

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3. Etch Characteristics of Low-K Materials Using CF₃I/C₄F₈/Ar/O₂ Inductively Coupled Plasmas;Science of Advanced Materials;2022-07-01

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5. The Characteristics of CF₃I Dielectric Barrier Discharge;IEEE Transactions on Plasma Science;2021-11

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