Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. II. Simplified modelling, systematic analysis and comparison with experimental measurements-Reference-Cited by-同舟云学术

Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. II. Simplified modelling, systematic analysis and comparison with experimental measurements

Published:1995-02-01 Issue:1 Volume:4 Page:107-116
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Dollet A,Couderc J P,Despax B

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference7 articles.

1. Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma

2. Plasma Deposition of SiNxHy: Process Chemistry vs Film Properties

3. Excimer laser photochemistry of silane-ammonia mixtures at 193 nm

4. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

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