Abstract
Abstract
In this study, PbZr0.52Ti0.48O3/PbZrO3 (PZT/PZ) multilayer films were prepared on SiO2/Si substrate buffered with LaNiO3 (LNO) thin films, and then annealed at different temperatures by rapid thermal annealing (RTA) technology. The phase structures, microstructures, and electrical properties of the obtained PZT/PZ multilayer films were studied. According to the results of XRD and SEM, it was found that the PZ films with perovskite phase were obtained by annealing at 650 °C firstly. The PZT films on crystallized PZ films were in amorphous phase after annealing at 450 °C, in pyrochlore phase after annealing at 550 °C, and finally in perovskite phase at annealing temperature higher than 600 °C. The multilayer films with the PZT films annealed at 550 °C exhibited linear hysteresis loops, and such films showed the enhanced energy storage density of 31.6 J cm−3 and the energy storage efficiency of 66.9% at a high breakdown field strength of 2475 kV cm−1. The experimental results proved that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing temperatures, which could further enhance the energy storage performance of the PZT/PZ multilayer films.
Funder
University Student Innovation Program
Key Research and Development Project
National University Student Innovation Program
Henan Normal University
National Natural Science Foundation of China
Henan Province
Scientific Research Project