Response embedded atom model potential of Pb at finite temperature: application on the dislocation mobility

Author:

Li PanORCID,Huang Yongfeng,Wang Kun,Xiao ShifangORCID,Yao Songlin,Hu Wangyu

Abstract

Abstract Dislocation is a major carrier of plastic deformation for metal materials and are crucial. Understanding the mechanism of dislocation motion is beneficial for understanding the plastic deformation of materials under dynamic loading. In this work, a new response EAM (REAM) potential is developed for the applications under high pressure and finite temperature conditions. We use the REAM potential to investigate the behaviors of edge and screw dislocations in Pb by molecular dynamics (MD) simulations, and compare it with two commonly used EAM potentials. Specially, we examine the influence of the stacking fault energy and the temperature-dependent elastic constants on the dislocation motions. Our results show that the temperature-dependent elastic constants do not considerably affect the dislocation motion at the linear region of low stress, while the stacking fault energy plays a significant role. In the nonlinear region, the stacking fault energy and elastic constant together influence the dislocation motion. In subsonic and low transonic regimes, the dislocation width oscillates with time, but eventually fluctuates around equilibrium width.

Funder

Natural Science Foundation of Hunan Province

Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of vacancy concentration on the edge dislocation motion in copper by atomic simulations;Modelling and Simulation in Materials Science and Engineering;2023-09-01

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