Structural role of double layer amphoteric oxides forms on electrical conductivity: PbO/zinc oxide semiconductor

Abstract

Abstract We have investigated the electrical properties of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes such as series resistance ( R s ), ideality factor ( n ), and barrier height ( φ b ). The samples were manufactured by using an evaporation technique at room temperature. To obtain their main electrical parameters, current-voltage (I–V) measurements have been performed in the dark and at room temperature. In the study, we examined two diodes to evaluate the electrical characteristics of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes using the thermionic emission (TE) theory, Norde’s method, and Cheung’s functions. While n, ϕ b , and I 0 values of Diode 1 were found to be 4.02, 0.739 eV, and 1.506. 10−8 A respectively, the same values of Diode 2 were calculated as 4.14, 0.724 eV, and 2.65.10−8 A, respectively, by using the TE method. The values of n, ϕ b , and R s were also calculated using the Cheung’s method, and they were found to be 10.048, 0.549 eV, and 4.058 k Ω , respectively, for Diode 1, while these values were calculated as 8.116, 0.659 eV, and 7.799 k Ω respectively, for Diode 2. φ b and R s values are also ascertained as 0.84 eV for Diode 1 and 0.80 eV for Diode 2, 18.2 k Ω for Diode 1 and 11.1 k Ω for Diode 2 using Norde Method, respectively. The forward bias I–V characteristics were used to obtain the energy distribution of the interface state density considering the effective barrier height’s bias dependence. The change observed in the interface state density’s magnitude ranged between 1.4 × 10 12 and 2.0 × 10 11 eV − 1 cm − 2 . The evaluated series resistance indicates the product of mobility and free carrier concentration, ideality factor is a measure of how closely the diode follows the ideal diode equation, and barrier height also depends on the concentration of carriers in PbO/Zinc Oxide double-layer semiconductors.