Abstract
Abstract
A monolithic pixel sensor test chip for the PANDA
micro-vertex detector has been implemented in a 180 nm HVCMOS
technology on a high resistivity substrate. The sensor should have
very high time resolution (1 ns sigma) and high dynamic range (up to
1000). The pixel electronics contains a charge sensitive amplifier,
a feedback circuit and two comparators. One comparator receives the
fast signal and enables accurate time measurement. The other
comparator receives the low pass filtered signal and is used for
precise amplitude measurement. This publication presents several
novel features of the PANDA ASIC, its characterization and several
measurement results.