A via last TSV process applied to ATLAS pixel detector modules: proof of principle demonstration

Author:

Barbero M,Fritzsch T,Gonella L,Hügging F,Krüger H,Rothermund M,Wermes N

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-02

2. A review of advances in pixel detectors for experiments with high rate and radiation;Reports on Progress in Physics;2018-05-29

3. Development of a Four-Side Buttable X-Ray Detection Module With Low Dead Area Using the UFXC32k Chips With TSVs;IEEE Transactions on Nuclear Science;2017-08

4. Results on 3D interconnection from AIDA WP3;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

5. Status and perspectives of pixel sensors based on 3D vertical integration;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-11

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