Study of various high voltage protection structures for reduction of the insensitive region of silicon sensors designed for extreme radiation tolerance-Reference-Cited by-同舟云学术

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Study of various high voltage protection structures for reduction of the insensitive region of silicon sensors designed for extreme radiation tolerance

Published:2011-01-11 Issue:01 Volume:6 Page:C01062-C01062
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Chmill V,Affolder A,Allport P P,Casse G,Huse T,Kendrick G,Tsurin I

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Reference5 articles.

1. Radiation-tolerant breakdown protection of silicon detectors using multiple floating guard rings

2. Irradiation studies of silicon pixel detectors for CMS

3. Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT

4. Planar edgeless silicon detectors for the TOTEM experiment

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-guard ring TCAD simulations for different n-on-p planar silicon particle detectors;Journal of Instrumentation;2021-02-23

2. A Comparative study by TCAD Simulation for two different planar n-on-p silicon particle detectors with different guard ring implant type;Journal of Physics: Conference Series;2021-01-01

3. Silicon strip and pixel detectors for particle physics experiments;Physics Reports;2019-10

4. Achievements of the ATLAS upgrade planar pixel sensors R&D project;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-11

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