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Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

  • Published:2017-02-02 Issue:02 Volume:12 Page:C02003-C02003
  • ISSN:1748-0221
  • Container-title:Journal of Instrumentation
  • language:
  • Short-container-title:J. Inst.

Author:

Mattiazzo S.,Bagatin M.,Bisello D.,Gerardin S.,Marchioro A.,Paccagnella A.,Pantano D.,Pezzotta A.,Zhang C-M.,Baschirotto A.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-08

2. Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si);IEEE Transactions on Electron Devices;2024-06

3. Characterization of a 28 nm CMOS Technology for Analog Applications in High Energy Physics;IEEE Transactions on Nuclear Science;2024-04

4. 28 nm front-end channels for the readout of pixel sensors in future high-rate applications;Journal of Instrumentation;2024-04-01

5. Von 65 nm bis 28 nm CMOS: Design analoger Bausteine von Frontend-Kanälen für Pixelsensoren in Hochenergiephysik-Experimenten;e & i Elektrotechnik und Informationstechnik;2023-12-29
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