Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects-Reference-Cited by-同舟云学术

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

Published:2018-01-30 Issue:01 Volume:13 Page:C01045-C01045
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Rafí J.M.,Pellegrini G.,Godignon P.,Quirion D.,Hidalgo S.,Matilla O.,Fontserè A.,Molas B.,Takakura K.,Tsunoda I.,Yoneoka M.,Pothin D.,Fajardo P.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/13/i=01/a=C01045/pdf

Reference18 articles.

1. Transmissive x-ray beam position monitors with submicron position- and submillisecond time resolution

2. Design and construction of a system for sun-tracking

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