Author:
Brundu D.,Cardini A.,Contu A.,Cossu G.M.,Dalla Betta G.-F.,Garau M.,Lai A.,Lampis A.,Loi A.,Obertino M.M.,Siddi B.G.,Vecchi S.
Abstract
Abstract
This paper presents the detailed simulation of a
double-pixel structure for charged particle detection based on the
3D-trench silicon sensor developed for the TIMESPOT project and a
comparison of the simulation results with measurements performed at
the π-M1 beam at PSI laboratory. The simulation is based on the
combined use of several software tools (TCAD, GEANT4, TCoDe and
TFBoost) which allow to fully design and simulate the device physics
response in very short computational time,
O(1–100 s) per simulated signal, by exploiting
parallel computation using single or multi-thread processors. This
allowed to produce large samples of simulated signals, perform
detailed studies of the sensor characteristics and make precise
comparisons with experimental results.
Subject
Mathematical Physics,Instrumentation
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