Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation-Reference-Cited by-同舟云学术

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Published:2019-05-07 Issue:05 Volume:14 Page:C05003-C05003
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Sultan DMS,Sevilla S. Gonzalez,Ferrere D.,Iacobucci G.,Zaffaroni E.,Wong W.,Pinto M.V. Barrero,Kiehn M.,Prathapan M.,Ehrler F.,Peric I.,Miucci A.,Anders J. Kenneth,Fehr A.,Weber M.,Schoening A.,Herkert A.,Augustin H.,Benoit M.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

https://iopscience.iop.org/article/10.1088/1748-0221/14/05/C05003/pdf

Reference15 articles.

1. Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

2. Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

3. Magnetic Czochralski silicon as detector material

4. The MuPix system-on-chip for the Mu3e experiment

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