Temporal characterisation of silicon sensors on Timepix3 ASICs

Abstract

Abstract The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to 8 × 1015 1 MeV  neq cm−2. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.