Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes-Reference-Cited by-同舟云学术

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Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes

Published:2016-09-07 Issue:39 Volume:49 Page:395104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Qian Huimin,Wu Chenfei,Lu Hai,Xu Weizong,Zhou Dong,Ren Fangfang,Chen Dunjun,Zhang Rong,Zheng Youdou

Funder

State Key Program for Basic Research of China

Major Industrial Research and Development Plan of Jiangsu Province

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=39/a=395104/pdf

Reference21 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

3. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

4. Trap densities in amorphous-InGaZnO4 thin-film transistors

5. Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

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1. Dynamic IGZO-based memristors for cost-effective physical reservoir computing;Chinese Journal of Physics;2024-10

2. Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits;Advanced Electronic Materials;2024-05-08

3. Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing;Journal of Applied Physics;2024-03-18

4. Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm;Materials Science in Semiconductor Processing;2024-03

5. Integration of microbattery with thin-film electronics for constructing an integrated transparent microsystem based on InGaZnO;Nature Communications;2023-09-01

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